JPH03181131A - 半導体ウエハの補強材形成方法および装置 - Google Patents
半導体ウエハの補強材形成方法および装置Info
- Publication number
- JPH03181131A JPH03181131A JP1322222A JP32222289A JPH03181131A JP H03181131 A JPH03181131 A JP H03181131A JP 1322222 A JP1322222 A JP 1322222A JP 32222289 A JP32222289 A JP 32222289A JP H03181131 A JPH03181131 A JP H03181131A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- reinforcing material
- wafer
- semiconductor wafer
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012779 reinforcing material Substances 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims abstract description 157
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 102100027340 Slit homolog 2 protein Human genes 0.000 abstract 1
- 101710133576 Slit homolog 2 protein Proteins 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000803 paradoxical effect Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/005—Cutting sheet laminae in planes between faces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
- H01L21/6733—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls characterized by a material, a roughness, a coating or the like
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322222A JPH03181131A (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの補強材形成方法および装置 |
| KR1019900015439A KR940007059B1 (ko) | 1989-12-11 | 1990-09-28 | 반도체웨이퍼의 슬라이스용 베이스의 부착방법과 그 장치 및 베이스의 부착구조 |
| US07/590,806 US5154873A (en) | 1989-12-11 | 1990-10-01 | Method and apparatus for mounting slice base on wafer of semiconductor |
| EP90120470A EP0432422B1 (en) | 1989-12-11 | 1990-10-25 | Method and apparatus for mounting slice base on wafer of semiconductor |
| DE69029510T DE69029510T2 (de) | 1989-12-11 | 1990-10-25 | Methode und Einrichtung zum Montieren einer Schneidstütze auf einem Halbleiter-Wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1322222A JPH03181131A (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの補強材形成方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03181131A true JPH03181131A (ja) | 1991-08-07 |
| JPH0583175B2 JPH0583175B2 (en]) | 1993-11-25 |
Family
ID=18141308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1322222A Granted JPH03181131A (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの補強材形成方法および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5154873A (en]) |
| EP (1) | EP0432422B1 (en]) |
| JP (1) | JPH03181131A (en]) |
| KR (1) | KR940007059B1 (en]) |
| DE (1) | DE69029510T2 (en]) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6074442A (en) * | 1994-10-28 | 2000-06-13 | Shin-Etsu Handotai Co., Ltd. | Method of separating slice base mounting member from wafer and jig adapted therefor |
| JP4419321B2 (ja) * | 2000-12-26 | 2010-02-24 | 株式会社デンソー | スパークプラグの製造方法 |
| DE10223937A1 (de) * | 2002-05-29 | 2004-01-15 | Wacker Siltronic Ag | Zweischichtverklebung von Sägehilfen auf Siliciumeinkristallstäben |
| JP4038679B2 (ja) * | 2003-05-13 | 2008-01-30 | 住友電気工業株式会社 | 半導体レーザーバーの固定用治具 |
| DE10359260A1 (de) * | 2003-12-17 | 2005-07-21 | Conti Temic Microelectronic Gmbh | Elektronisches Gerät sowie Verfahren zum Bonden eines elektronischen Geräts |
| CN101524877B (zh) * | 2008-11-25 | 2011-08-31 | 河南鸿昌电子有限公司 | 一种切割半导体晶片的固定方法 |
| CN110299316B (zh) * | 2019-07-24 | 2024-03-01 | 常州时创能源股份有限公司 | 一种可承载半片的硅片花篮 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4261781A (en) * | 1979-01-31 | 1981-04-14 | International Business Machines Corporation | Process for forming compound semiconductor bodies |
| JPH07118473B2 (ja) * | 1987-07-14 | 1995-12-18 | 九州電子金属株式会社 | 半導体ウエ−ハの製造方法 |
| FR2629008B1 (fr) * | 1988-03-23 | 1991-10-11 | Commissariat Energie Atomique | Procede et dispositif de clivage d'une plaquette de silicium |
| JPH01293613A (ja) * | 1988-05-23 | 1989-11-27 | Naoetsu Denshi Kogyo Kk | ディスクリート素子用基板及びその製造方法 |
-
1989
- 1989-12-11 JP JP1322222A patent/JPH03181131A/ja active Granted
-
1990
- 1990-09-28 KR KR1019900015439A patent/KR940007059B1/ko not_active Expired - Fee Related
- 1990-10-01 US US07/590,806 patent/US5154873A/en not_active Expired - Lifetime
- 1990-10-25 EP EP90120470A patent/EP0432422B1/en not_active Expired - Lifetime
- 1990-10-25 DE DE69029510T patent/DE69029510T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0583175B2 (en]) | 1993-11-25 |
| DE69029510D1 (de) | 1997-02-06 |
| EP0432422A2 (en) | 1991-06-19 |
| EP0432422A3 (en) | 1991-12-11 |
| KR940007059B1 (ko) | 1994-08-04 |
| KR910013534A (ko) | 1991-08-08 |
| DE69029510T2 (de) | 1997-05-22 |
| EP0432422B1 (en) | 1996-12-27 |
| US5154873A (en) | 1992-10-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |